Designing a NAND Gate Using CMOS Technology The process of designing a NAND gate using CMOS technology involves creating two PMOS and two NMOS transistors. The design starts with defining P+ diffusion (24 lambda by 4 lambda) for the PMOS and N+ diffusion (also 24 lambda by 4 lambda) for the NMOS, ensuring proper separation between them. Polysilicon is used to create terminals like drain, gate, and source while maintaining specific dimensions such as height above active material at three lambdas.
Connecting Components to Achieve Functionality To complete the circuit functionality, drains of both PMOS and NMOS are connected via metal one layer; similarly, sources are linked appropriately. Two input signals A & B are assigned at respective gates while output Y is derived from their interaction based on logic rules: when both inputs are high simultaneously—output becomes low otherwise remains high throughout other conditions reflecting standard behavior expected within any functional nand-gate setup designed under micro-bit environment constraints